Molex Terminal Block Tools & Accessories COVER BTS 26 KIT COVER BTS 26 KIT datasheet, inventory, & pricing. Symptoms: Following line power disconnect, wouldn't start up. Traced circuit, found broken Tr in LV side, replaced, no good. Trouble figuring gate drive cct. Applied 30 VDC to HV side and drove gate from 10 kHz signal generator (5 V squarewave via 1K resistor). The MOSFET switcher was okay, output active but won't start. The MAX6340/MAX6421 MAX6426 low-power microprocessor supervisor circuits monitor system voltages from 1.6V to 5V. These devices perform a single function: they assert a reset signal whenever the VCC supply voltage falls below its reset threshold.
Type Designator: STS3426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 4.2 A
Total Gate Charge (Qg): 58 nC
Drain-Source Capacitance (Cd): 73 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: SOT23
STS3426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS3426 Datasheet (PDF)
0.1. sts3426.pdf Size:121K _samhop
Rapido y fogoso latino. GreenProductSTS3426aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.31 @ VGS= 10VSuface Mount Package.30V 4.2A 40 @ VGS= 4.5V52 @ VGS= 2.5V SOT 26 DTop ViewD 1 6 DGD 2 5 DG 3 4 SSABSOLUTE MAXIMUM RA
8.1. sts3420.pdf Size:107K _samhop
GreenProductSTS3420aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS= 10VSuface Mount Package.30V 4.5A 40 @ VGS= 4.5V 53 @ VGS= 2.5V DSOT23DGSGS) ABSOLUTE MAXIMUM RATINGS (TA=25C unless o
8.2. sts3429.pdf Size:103K _samhop
Websites that allow web scraping. GreenProductSTS3429aS mHop Microelectronics C orp.Ver 2.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.85 @ VGS=-10VSuface Mount Package.-30V -3.2A105 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS
Datasheet: FDG6332C, STS3623, FDG6332C_F085, STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429, 2SK2837, FDG8850NZ, FDH038AN08A1, FDH047AN08A0, FDH055N15A, FDH3632, STS3411A, FDH44N50, FDH45N50F_F133.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Type Designator: STS3426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 4.2 A
Total Gate Charge (Qg): 58 nC
6426 Mosfet Power
Drain-Source Capacitance (Cd): 73 pF
Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm
Package: SOT23
STS3426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STS3426 Datasheet (PDF)
0.1. sts3426.pdf Size:121K _samhop
GreenProductSTS3426aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.31 @ VGS= 10VSuface Mount Package.30V 4.2A 40 @ VGS= 4.5V52 @ VGS= 2.5V SOT 26 DTop ViewD 1 6 DGD 2 5 DG 3 4 SSABSOLUTE MAXIMUM RA
8.1. sts3420.pdf Size:107K _samhop
GreenProductSTS3420aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.33 @ VGS= 10VSuface Mount Package.30V 4.5A 40 @ VGS= 4.5V 53 @ VGS= 2.5V DSOT23DGSGS) ABSOLUTE MAXIMUM RATINGS (TA=25C unless o
8.2. sts3429.pdf Size:103K _samhop
GreenProductSTS3429aS mHop Microelectronics C orp.Ver 2.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.85 @ VGS=-10VSuface Mount Package.-30V -3.2A105 @ VGS=-4.5VDSOT-23DGSGS(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS
Datasheet: FDG6332C, STS3623, FDG6332C_F085, STS3621, FDG6335N, FDG8842CZ, STS3620, STS3429, 2SK2837, FDG8850NZ, FDH038AN08A1, FDH047AN08A0, FDH055N15A, FDH3632, STS3411A, FDH44N50, FDH45N50F_F133.
6426 Mosfet Price
6426 Mosfet W
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
6426 Mosfet Pdf
